The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Aug. 27, 2020
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Guilei Wang, Beijing, CN;
Henry H Radamson, Beijing, CN;
Zhenzhen Kong, Beijing, CN;
Junjie Li, Beijing, CN;
Jinbiao Liu, Beijing, CN;
Junfeng Li, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Abstract
A semiconductor device and a method for manufacturing the semiconductor device. Multiple stacks and an isolation structure among the multiple stacks are formed on a substrate. Each stack includes a first doping layer, a channel layer and a second doping layer. For each stack, the channel layer is laterally etched from at least one sidewall of said stack to form a cavity located between the first doping layer and the second doping layer, and a gate dielectric layer and a gate layer are formed in the cavity. A first sidewall of each stack is contact with the isolation structure, and the at least one sidewall does not include the first side wall. Costly high-precision etching is not necessary, and therefore a device with a small size and a high performance can be achieved with a simple process and a low cost. Diversified device structures can be provided on requirement.