The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Feb. 03, 2021
Applicant:
Hitachi Energy Switzerland Ag, Baden, CH;
Inventors:
Giovanni Alfieri, Baden, CH;
Vinoth Sundaramoorthy, Wettingen, CH;
Assignee:
Hitachi Energy Switzerland AG, Baden, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 21/046 (2013.01); H01L 21/0485 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/868 (2013.01);
Abstract
A method for forming a semiconductor device includes implanting first ions and second ions into a p-type silicon carbide layer from a first main side to form an implantation layer at the first main side. The implanting is performed by plasma immersion ion implantation in which the p-type silicon carbide layer is immersed in a plasma comprising the first ions and the second ions. The first ions can be ionized aluminum atoms and the second ions are different from the first ions.