The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Nov. 20, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lan Yu, Albany, NY (US);

Tyler Sherwood, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02178 (2013.01); H01L 21/02164 (2013.01); H01L 21/02381 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01);
Abstract

Exemplary methods of forming a semiconductor structure may include forming a liner along sidewalls of a trench defined from a first surface of a semiconductor substrate. The liner may extend along the first surface of the semiconductor substrate. The methods may include filling the trench with a dielectric material. The methods may include removing the dielectric material and the liner from the first surface of the semiconductor substrate. The methods may include forming a layer of the liner across the first surface of the semiconductor substrate and the trench defined within the semiconductor substrate.


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