The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Mar. 20, 2020
Applicant:

Microjet Technology Co., Ltd., Hsinchu, TW;

Inventors:

Hao-Jan Mou, Hsinchu, TW;

Rong-Ho Yu, Hsinchu, TW;

Cheng-Ming Chang, Hsinchu, TW;

Hsien-Chung Tai, Hsinchu, TW;

Wen-Hsiung Liao, Hsinchu, TW;

Chi-Feng Huang, Hsinchu, TW;

Yung-Lung Han, Hsinchu, TW;

Chun-Yi Kuo, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F04B 43/04 (2006.01); H01L 41/09 (2006.01); F04B 45/047 (2006.01);
U.S. Cl.
CPC ...
F04B 43/046 (2013.01); F04B 45/047 (2013.01); H01L 41/0973 (2013.01);
Abstract

A micro-electromechanical systems pump includes a first substrate, a first oxide layer, a second substrate, and a piezoelectric element. The first oxide layer is stacked on the first substrate. The second substrate is combined with the first substrate, and the second substrate includes a silicon wafer layer, a second oxide layer, and a silicon material layer. The silicon wafer layer has an actuation portion. The actuation portion is circular and has a maximum stress value and an actuation stress value. The second oxide layer is formed on the silicon wafer layer. The silicon material layer is located at the second oxide layer and is combined with the first oxide layer. The piezoelectric element is stacked on the actuation portion, and has a piezoelectric stress value. The maximum stress value is greater than the actuation stress value, and the actuation stress value is greater than the piezoelectric stress value.


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