The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Apr. 19, 2019
Showa Denko K.k., Tokyo, JP;
Yohei Fujikawa, Hikone, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing () and a substrate support () in a single crystal manufacturing apparatus (), wherein the single crystal manufacturing apparatus () comprises a crystal growth container () and a heating member () arranged on an outer periphery of the crystal growth container (), wherein the crystal growth container () includes the SiC source housing () disposed at a lower portion of the apparatus, and the substrate support () which is arranged above the SiC source housing () and supports a substrate (S) used for crystal growth so as to face the SiC source housing (), and wherein the single crystal manufacturing apparatus () is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing ().