The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Aug. 26, 2019
Applicant:

Slt Technologies, Inc., Los Angeles, CA (US);

Inventors:

Mark P. D'Evelyn, Santa Barbara, CA (US);

James S. Speck, Fremont, CA (US);

Derrick S. Kamber, Fremont, CA (US);

Douglas W. Pocius, Fremont, CA (US);

Assignee:

SLT Technologies, Inc., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/06 (2006.01); C30B 7/10 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 19/06 (2006.01); C30B 19/12 (2006.01);
U.S. Cl.
CPC ...
C30B 7/105 (2013.01); C30B 19/068 (2013.01); C30B 19/12 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 33/06 (2013.01); H01L 21/0254 (2013.01); H01L 21/02609 (2013.01); H01L 29/2003 (2013.01);
Abstract

Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.


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