The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Sep. 10, 2018
Applicants:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Keiichi Umeda, Nagaokakyo, JP;

Takaaki Mizuno, Nagaokakyo, JP;

Yasuhiro Aida, Nagaokakyo, JP;

Masato Uehara, Tosu, JP;

Toshimi Nagase, Tosu, JP;

Morito Akiyama, Tosu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/047 (2006.01); H03H 9/17 (2006.01); H01L 41/187 (2006.01); H01L 41/29 (2013.01); H01L 41/316 (2013.01); H01L 41/08 (2006.01); H03H 3/02 (2006.01); H03H 9/05 (2006.01); H03H 9/13 (2006.01); H03H 9/02 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H03H 9/176 (2013.01); H01L 41/0477 (2013.01); H01L 41/0805 (2013.01); H01L 41/187 (2013.01); H01L 41/29 (2013.01); H01L 41/316 (2013.01); H03H 3/02 (2013.01); H03H 9/0595 (2013.01); H03H 9/131 (2013.01); H03H 2003/027 (2013.01); H03H 2009/02488 (2013.01); H03H 2009/155 (2013.01);
Abstract

A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.


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