The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Oct. 19, 2020
Applicant:
United States Department of Energy, Washington, DC (US);
Inventors:
Dustin McIntyre, Washington, PA (US);
Daniel Hartzler, Westover, WV (US);
Assignee:
U.S. Department of Energy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
G01J 3/46 (2006.01); H01S 3/106 (2006.01); H01S 3/094 (2006.01); H01S 3/11 (2006.01); G01N 21/31 (2006.01);
U.S. Cl.
CPC ...
H01S 3/106 (2013.01); G01N 21/31 (2013.01); H01S 3/094038 (2013.01); H01S 3/094053 (2013.01); H01S 3/094096 (2013.01); H01S 3/11 (2013.01); G01N 2201/0633 (2013.01); G01N 2201/0634 (2013.01); G01N 2201/0636 (2013.01); G01N 2201/06113 (2013.01); G01N 2201/08 (2013.01);
Abstract
One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.