The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Jul. 23, 2020
Applicant:

Cerfe Labs, Inc., Austin, TX (US);

Inventors:

Carlos Alberto Paz de Araujo, Colorado Springs, CO (US);

Jolanta Bozena Celinska, Colorado Springs, CO (US);

Lucian Shifren, San Jose, CA (US);

Assignee:

CERFE LABS, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); C23C 16/40 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); C23C 16/18 (2013.01); C23C 16/406 (2013.01); C23C 16/45525 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1616 (2013.01); H01L 45/1641 (2013.01);
Abstract

Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.


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