The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Mar. 22, 2019
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Yong Tae Moon, Seoul, KR;

Ji Hyung Moon, Seoul, KR;

Sang Youl Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01);
Abstract

In an embodiment, disclosed is a semiconductor device comprising: a semiconductor structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer; and a second electrode which is electrically connected to the second conductive semiconductor layer, wherein an area ratio between an area of an upper surface of the second conductive semiconductor layer and an area of an outer surface of the active layer is 1:0.0005 to 1:0.01.


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