The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
May. 31, 2017
First Solar, Inc., Tempe, AZ (US);
Kenneth Ring, Perrysburg, OH (US);
William H. Huber, Perrysburg, OH (US);
Hongying Peng, Perrysburg, OH (US);
Markus Gloeckler, Perrysburg, OH (US);
Gopal Mor, Perrysburg, OH (US);
Feng Liao, Perrysburg, OH (US);
Zhibo Zhao, Perrysburg, OH (US);
Andrei Los, Perrysburg, OH (US);
First Solar, Inc., Tempe, AZ (US);
Abstract
A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×10/cmto 2.5×10/cmvia any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and Pat higher P(=I*Vproduct) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased I, increased V, or both.