The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Dec. 02, 2021
Applicant:

Solarlab Aiko Europe Gmbh, Freiburg, DE;

Inventors:

Kaifu Qiu, Yiwu, CN;

Yongqian Wang, Yiwu, CN;

Xinqiang Yang, Yiwu, CN;

Gang Chen, Yiwu, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/028 (2013.01); H01L 31/02363 (2013.01); H01L 31/022466 (2013.01); H01L 31/0682 (2013.01);
Abstract

A back contact structure includes: a silicon substrate including a back including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate, the first dielectric layer at least covering the plurality of recesses; a plurality of P-type doped regions and N-type doped regions disposed on the first dielectric layer and disposed alternately in the plurality of recesses; a second dielectric layer disposed between the plurality of P-type doped regions and the plurality of N-type doped regions; and a conductive layer disposed on the plurality of P-type doped regions and the plurality of N-type doped regions


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