The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Dec. 10, 2019
Applicant:
Sony Group Corporation, Tokyo, JP;
Inventor:
Yuki Miyanami, Kanagawa, JP;
Assignee:
Sony Group Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/306 (2013.01); H01L 21/3105 (2013.01); H01L 21/76825 (2013.01); H01L 21/76828 (2013.01); H01L 21/76832 (2013.01); H01L 29/4236 (2013.01); H01L 29/66545 (2013.01); H01L 29/7845 (2013.01); H01L 29/7848 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/6653 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes: a sidewall insulating film; a gate electrode; source and drain regions; a first stress film; and a second stress film.