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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11450734 B1

PDFFull Text
Date of Patent:
Sep. 20, 2022

Filed:

Jun. 11, 2020

Semiconductor device and fabrication method for semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Motoyoshi Kubouchi, Matsumoto, JP;

Kosuke Yoshida, Matsumoto, JP;

Soichi Yoshida, Matsumoto, JP;

Koh Yoshikawa, Matsumoto, JP;

Nao Suganuma, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 21/324 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 21/66 (2006.01); H01L 21/265 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 21/221 (2013.01); H01L 21/26526 (2013.01); H01L 21/324 (2013.01); H01L 22/12 (2013.01); H01L 27/0664 (2013.01); H01L 29/0611 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.

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