The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Jan. 30, 2020
Hamamatsu Photonics K.k., Hamamatsu, JP;
Mitsuhito Mase, Hamamatsu, JP;
Keiki Taguchi, Hamamatsu, JP;
Hajime Ishihara, Hamamatsu, JP;
Hiroo Yamamoto, Hamamatsu, JP;
Akihiro Shimada, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.