The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Mar. 04, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Yoshitaka Kubota, Sagamihara, JP;

Erika Kodama, Yokohama, JP;

Assignee:

KIOXIA CORPORATION, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/528 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a substrate having a first region and a second region arranged in a first direction. The first region includes word line layers and interlayer insulating layers laminated in a second direction, a first semiconductor layer opposed to the word line layers, and an electric charge accumulating film disposed between them. The second region includes a part of the word line layers and the interlayer insulating layers, first insulating layers and a part of the interlayer insulating layers that separate from the word line layers, a contact that has an outer peripheral surface connected to the first insulating layers, and a second insulating layer disposed between the word line layers and the first insulating layers. The first insulating layers have side surfaces connected to the word line layers and side surfaces connected to the second insulating layer.


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