The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Mar. 15, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Shinichi Nakao, Yokkaichi Mie, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 25/18 (2006.01); H01L 21/56 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02282 (2013.01); H01L 21/02345 (2013.01); H01L 21/56 (2013.01); H01L 25/18 (2013.01); H01L 2221/6835 (2013.01);
Abstract
A semiconductor device of an embodiment is manufactured by forming a first layer by applying a liquid containing silicon oxide particles onto a first substrate, performing a first heat treatment, forming a second layer including a first insulator on the upper surface and the side surfaces of the first layer, forming a third layer including an electronic circuit on the second layer, bonding a second substrate including a semiconductor circuit to the third layer, and separating the first substrate and the second substrate at the first layer.