The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Aug. 03, 2021
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventors:

Chien-Fa Lee, Kaohsiung, TW;

Yi-Chun Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G11C 17/18 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A sensing circuit is provided which generates a sensing result according to a reading voltage of a non-volatile memory. The sensing circuit includes four transistors and a switch group. A first transistor is coupled between an operating voltage and a first node. A second transistor is coupled between the first node and a second node. A third transistor is coupled between the second node and a reference ground voltage. A control terminal of the first transistor, a control terminal of the second transistor, and a control terminal of the third transistor all receive the reading voltage. A fourth transistor is coupled between the operating voltage and the first node. The switch group forms or disconnects a conduction path between a control terminal of the fourth transistor and the second node according to a control signal, so that the first node obtains the sensing result.


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