The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Dec. 23, 2020
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Lien-Hsiang Chen, Miao-Li County, TW;

Kung-Chen Kuo, Miao-Li County, TW;

Ming-Chun Tseng, Miao-Li County, TW;

Cheng-Hsu Chou, Miao-Li County, TW;

Kuan-Feng Lee, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01); G09G 2300/043 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0809 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/045 (2013.01); G09G 2330/021 (2013.01);
Abstract

A driving circuit includes a first transistor having a first terminal, a second terminal and a control terminal; a second transistor having a first terminal connected to the second terminal of the first transistor and a second terminal connected to an organic light-emitting diode; a third transistor having a first terminal connected to the control terminal of the first transistor; a fourth transistor having a first terminal connected to the first terminal of the first transistor; and a fifth transistor having a first terminal connected to the second terminal of the second transistor. The first transistor, the second transistor and the fourth transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.


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