The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Feb. 16, 2022
Applicant:

Zhejiang University, Zhejiang, CN;

Inventors:

Cheng Zhuo, Zhejiang, CN;

Xunzhao Yin, Zhejiang, CN;

Qingrong Huang, Zhejiang, CN;

Di Gao, Zhejiang, CN;

Assignee:

ZHEJIANG UNIVERSITY, Zhejiang, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06N 3/08 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/08 (2013.01); G11C 13/0069 (2013.01);
Abstract

The present invention discloses a neural network training method for a memristor memory for memristor errors, which is mainly used for solving the problem of decrease in inference accuracy of a neural network based on the memristor memory due to a process error and a dynamic error. The method comprises the following steps: performing modeling on a conductance value of a memristor under the influence of the process error and the dynamic error, and performing conversion to obtain a distribution of corresponding neural network weights; constructing a prior distribution of the weights by using the weight distribution obtained after modeling, and performing Bayesian neural network training based on variational inference to obtain a variational posterior distribution of the weights; and converting a mean value of the variational posterior of the weights into a target conductance value of the memristor memory.


Find Patent Forward Citations

Zhuo, Cheng. (2022). Neural network training method for memristor memory for memristor errors (U.S. Patent No. 11449754). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11449754

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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