The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Dec. 23, 2020
Applicant:

Hamilton Sundstrand Corporation, Charlotte, NC (US);

Inventor:

Gordon Elliott Winer, Prescott, AZ (US);

Assignee:

Hamilton Sundstrand Corporation, Charlotte, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/08 (2006.01); H02H 9/02 (2006.01); G01R 19/165 (2006.01); B64D 27/02 (2006.01); G01R 31/00 (2006.01); G01R 31/40 (2020.01); H02H 1/00 (2006.01); B64D 27/24 (2006.01); B64D 41/00 (2006.01);
U.S. Cl.
CPC ...
G01R 19/16571 (2013.01); B64D 27/02 (2013.01); G01R 31/008 (2013.01); G01R 31/40 (2013.01); H02H 1/0007 (2013.01); H02H 3/08 (2013.01); B64D 27/24 (2013.01); B64D 41/00 (2013.01);
Abstract

Apparatus and associated methods relate to detection of an overcurrent condition by determining if a voltage across a current-sense resistor exceeds a predetermined voltage threshold. The voltage at each side of the current-sense resistor is sensed indirectly, through a diode network. The diode networks through which the voltages on each side of the current-sense resistor are biased differently from one another. Such differently-biased diode networks translate the voltages at each side of the current-sense resistor by different amounts, the biasing of these diode networks is such that a voltage difference between the second terminals of the first and second diode networks is of a first polarity during normal current conditions, and the voltage difference between the second terminals of the first and second diode networks is of a second polarity during overcurrent conditions.


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