The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Sep. 20, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Masahiro Yokogawa, Tokyo, JP;
Takahiro Kawasaki, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method includes: forming an n-type diffusion layer as a second-conductivity-type semiconductor layer on a first-conductivity-type crystalline semiconductor substrate; and forming an anti-reflective film by a CVD method to extend from a light receiving surface side to a side surface of the semiconductor substrate, by placing the semiconductor substrate on a mount in a film forming chamber with a back surface brought into contact with the mount, evacuating and decompressing the film forming chamber, and supplying source gas into the film forming chamber. In the film formation, a tray has a through hole, and the anti-reflective film is formed on the surface of the semiconductor substrate excluding the contact surface by bringing the semiconductor substrate into close contact with the contact surface by causing the through hole to have a negative pressure relative to the pressure in the film forming chamber by the evacuation.