The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Apr. 03, 2020
Kunming University of Science and Technology, Kunming, CN;
Lei Xu, Kunming, CN;
Jinhui Peng, Kunming, CN;
Shenghui Guo, Kunming, CN;
Libo Zhang, Kunming, CN;
Zhaohui Han, Kunming, CN;
Yi Xia, Kunming, CN;
Shaohua Ju, Kunming, CN;
Shanju Zheng, Kunming, CN;
Shiwei Li, Kunming, CN;
Zemin Wang, Kunming, CN;
Zhang Xu, Kunming, CN;
KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY, Kunming, CN;
Abstract
The present invention provides a microwave-based high-throughput material processing device with a concentric rotary chassis. The device includes a microwave source generator, a microwave reaction chamber, and a temperature acquisition device. The microwave reaction chamber is provided with a rotary table, a thermal insulation barrel and a crucible die. The thermal insulation barrel is disposed on the rotary table, and the crucible die is disposed in the thermal insulation barrel. The crucible die is provided with a plurality of first grooves, and the first grooves are evenly distributed on a first circumference. A plurality of first fixing holes are disposed on a top of the thermal insulation barrel, and the first fixing holes are disposed corresponding to the first grooves. A first acquisition hole is disposed on the top of the microwave reaction chamber, and the first acquisition hole is located right above the first circumference.