The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jan. 10, 2019
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Kazuya Yonemoto, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
Provided is a high-sensitivity-side transfer transistor that transfers a charge from a high-sensitivity photodiode having a sensitivity higher than a predetermined sensitivity to a first charge storage unit. A low-sensitivity-side transfer transistor that transfers a charge from a low-sensitivity photodiode having a sensitivity lower than the predetermined sensitivity to a second charge storage unit. An amplification transistor that amplifies a voltage of the first charge storage unit. A first conversion efficiency control transistor that controls conversion efficiency of converting the charge to the voltage by opening and closing a pathway between the first and second charge storage units. A second conversion efficiency control transistor that controls the conversion efficiency by opening and closing a pathway between the second charge storage unit and a third charge storage unit.