The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jan. 13, 2021
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Seigi Ishiji, Tokyo, JP;

Minoru Kurosawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02P 6/182 (2016.01); H02P 6/28 (2016.01); H02P 6/18 (2016.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H02P 6/182 (2013.01); H02M 7/53873 (2013.01); H02P 6/187 (2013.01); H02P 6/28 (2016.02);
Abstract

A gate drive semiconductor device includes: external terminals to which PWM control signals are supplied; external terminals outputting a drive signal for driving a three-phase BLDC motor; external terminals to which the counter electromotive voltage generated by driving the three-phase BLDC motor is supplied; a zero-cross determination unit generating an interrupt signal indicating timing at which the counter electromotive voltage intersects with a midpoint potential of the three-phase BLDC motor based on the PWM control signal and the counter electromotive voltage; and an external terminal outputting the interrupt signal.


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