The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jan. 22, 2020
Applicant:
Takeshi Kawashima, Miyagi, JP;
Inventor:
Takeshi Kawashima, Miyagi, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01L 33/0075 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01);
Abstract
A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.