The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Feb. 05, 2021
Marvell Asia Pte, Ltd., Singapore, SG;
Xiaoguang He, Diamond Bar, CA (US);
Radhakrishnan L. Nagarajan, San Jose, CA (US);
Marvell Asia Pte Ltd., Singapore, SG;
Abstract
A photonics device includes a silicon wafer including an upper surface region, a trench region, and a ridge structure. The ridge structure electrically isolates the upper surface region from the trench region. A laser diode chip flip-bonded onto the silicon wafer includes an electrode region bonded with the upper surface region, a gain region bonded with the trench region, and an isolation region bonded with the ridge structure. The isolation region electrically isolates the gain region from the electrode region. A conductor layer arranged between the silicon wafer and the laser diode chip includes a first section electrically connecting the gain region to a first electrode of the photonics device and a second section configured to electrically connect the electrode region to a second electrode of the photonics device. The first section is electrically isolated from the second section by the isolation region.