The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jul. 31, 2018
Applicant:

Nikkiso Co., Ltd., Tokyo, JP;

Inventors:

Yuta Furusawa, Ishikawa, JP;

Mitsugu Wada, Ishikawa, JP;

Yusuke Matsukura, Ishikawa, JP;

Cyril Pernot, Ishikawa, JP;

Assignee:

Nikkiso Co., Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01S 5/22 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01S 5/2206 (2013.01); H01S 5/2216 (2013.01); H01S 5/3216 (2013.01);
Abstract

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.


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