The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jun. 21, 2019
Jingao Solar Co., Ltd., Xingtai, CN;
Xiaoye Chen, Yangzhou, CN;
Wenjuan Xue, Yangzhou, CN;
Xiulin Jiang, Yangzhou, CN;
Haipeng Yin, Yangzhou, CN;
JINGAO SOLAR CO., LTD., Xingtai, CN;
Abstract
A crystalline silicon solar cell includes a gallium oxide layer in direct contact with a P-type silicon layer in the crystalline silicon solar cell. The gallium oxide layer is arranged on the P-type silicon layer of the crystalline silicon solar cell, negative charges of the gallium oxide layer are used to carry out chemical passivation and field passivation on a surface of the P-type silicon layer, and the number of dangling bonds and minority carriers of silicon atoms on the surface of the P-type silicon layer is reduced, so that a minority carrier recombination rate at the surface of the P-type silicon layer is reduced. In addition, the gallium oxide layer has a relatively wide band gap and an appropriate optical refractive index.