The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jun. 21, 2019
Drexel University, Philadelphia, PA (US);
Divya Pathak, Philadelphia, PA (US);
Ioannis Savidis, Wallingford, PA (US);
Drexel University, Philadelphia, PA (US);
Abstract
The increasing power density and, therefore, current consumption of high performance integrated circuits (ICs) results in increased challenges in the design of a reliable and efficient on-chip power delivery network. In particular, meeting the stringent on-chip impedance of the IC requires circuit and system techniques to mitigate high frequency noise that results due to resonance between the package inductance and the onchip capacitance. In this paper, a novel circuit technique is proposed to suppress high frequency noise through the use of a hyperabrupt junction tuning varactor diode as a decoupling capacitor for noise critical functional blocks. With the proposed circuit technique, the voltage droops and overshoots on the onchip power distribution network are suppressed by up to 60% as compared to MIM or deep trench decoupling capacitors of the same capacitance. In addition, there is no added latency to react to power supply noise and there is no degradation to circuit performance as compared to existing techniques in commercial products and literature.