The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Mar. 26, 2020
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Youn Sung Choi, San Diego, CA (US);
Kwanyong Lim, San Diego, CA (US);
Youseok Suh, San Diego, CA (US);
Hyunwoo Park, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7855 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 27/0886 (2013.01); H01L 29/1037 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
Certain aspects of the present disclosure generally relate to techniques for reducing leakage current in polysilicon-on-active-edge structures. An example transistor structure includes one or more active devices and at least one dummy device disposed at an edge of the transistor structure, wherein the at least one dummy device has a different gate structure than the one or more active devices.