The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Feb. 19, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Takaaki Tominaga, Tokyo, JP;

Yutaka Fukui, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0615 (2013.01); H01L 29/1608 (2013.01);
Abstract

A drift layer and a source region have a first conductivity type. A base region has a second conductivity type. A first trench penetrates the source region and the base region. A gate electrode is provided in the first trench through a gate insulation film. A first relaxation region is disposed below the first trench, and has the second conductivity type. A source pad electrode is electrically connected to the first relaxation region. A gate pad electrode is disposed in a non-element region. An impurity region is disposed in the non-element region, is provided on the drift layer, and has the first conductivity type. A second trench penetrates the impurity region. A second relaxation region is disposed below the second trench, and has the second conductivity type.


Find Patent Forward Citations

Tominaga, Takaaki. (2022). Silicon carbide semiconductor device (U.S. Patent No. 11444193). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11444193

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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