The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Oct. 28, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Nao Nagata, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0649 (2013.01); H01L 29/41708 (2013.01); H01L 29/4236 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, first and second trench electrodes formed on the semiconductor substrate, a floating layer of a first conductivity type formed around the first and second trench electrodes, a floating separation layer of a second conductivity type formed between the first and second trench electrodes and contacted with the floating layer of the first conductivity type and a floating layer control gate disposed on the floating separation layer of the second conductivity type.