The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Dec. 01, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Atsushi Era, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7783 (2013.01);
Abstract
Examples of a method for producing a semiconductor device includes: forming a barrier layer having a composition of InAlN or InAlGaN over a channel layer; forming a transition layer having a composition of InGaN on the barrier layer while raising a growth temperature; and forming a cap layer of GaN on the transition layer.