The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Oct. 26, 2020
Sumitomo Electric Industries, Ltd., Osaka, JP;
Shinya Fujiwara, Osaka, JP;
Tomoaki Miyoshi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An InP substrate, being a group III-V compound semiconductor substrate, that includes, on a main surface thereof, 0.22 particles/cmthat have a particle diameter of at least 0.19 μm or 20 particles/cmthat have a particle diameter of 0.079 μm. An InP substrate with an epitaxial layer, being a group III-V compound semiconductor substrate with an epitaxial layer, includes: the InP substrate and an epitaxial layer arranged upon the main surface of the InP substrate; and, upon the main surface thereof when the thickness of the epitaxial layer is 0.3 μm, no more than 10 LPD that have a circle-equivalent diameter of at least 0.24 μm, per cm, or no more than 30 LPD that have a circle-equivalent diameter of at least 0.136 μm, per cm. As a result, a group III-V compound semiconductor substrate capable of reducing defects in an epitaxial layer grown upon a main surface thereof and a group III-V compound semiconductor substrate with an epitaxial layer are provided.