The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Apr. 24, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Hayato Okamoto, Tokyo, JP;
Ze Chen, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a technique capable of improving performance of a semiconductor device. A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type located on the first semiconductor region, third and fourth semiconductor regions of the second conductivity type, a fifth semiconductor region of the first conductivity type, and an electrode. The third semiconductor region is located on the second semiconductor region, and has a higher impurity concentration than the second semiconductor region. The fourth semiconductor region has a higher impurity concentration than the second semiconductor region, is located separately from the third semiconductor region in a planar view, and has contact with the second semiconductor region. The fifth semiconductor region is located on the second semiconductor region, and is located between the third and fourth semiconductor regions in a planar view. The electrode does not have contact with the fourth and fifth semiconductor regions but has contact with the third semiconductor region.