The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Sep. 01, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Shunpei Takeshita, Yokkaichi, JP;

Naoki Yamamoto, Kuwana, JP;

Kojiro Shimizu, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11551 (2017.01); G11C 8/14 (2006.01); H01L 39/24 (2006.01); H01L 21/02 (2006.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); G11C 8/14 (2013.01); H01L 21/0268 (2013.01); H01L 21/0273 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11519 (2013.01); H01L 27/11551 (2013.01); H01L 27/11565 (2013.01); H01L 39/2467 (2013.01);
Abstract

A manufacturing method of a semiconductor memory device in an embodiment, includes: forming a first mask pattern having a first opening and a plurality of second openings above a stacked body; forming a second mask pattern covering some of the plurality of second openings; and etching the stacked body with the first mask pattern as a mask while sequentially exposing the plurality of second openings by causing an end of the second mask pattern to retreat to form a first hole extending in the stacked body in a stacking direction of the stacked body at a position of the first opening and form a plurality of second holes extending in the stacked body to different depths in the stacking direction at positions of the plurality of second openings, and reaching first layers of a plurality of first layers at different levels.


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