The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Apr. 20, 2020
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Jaume Roig-Guitart, Oudenaarde, BE;
Aurore Constant, Oudenaarde, BE;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 21/306 (2006.01); H01L 29/205 (2006.01); H01L 29/30 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 21/30612 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/30 (2013.01); H01L 29/66219 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/868 (2013.01);
Abstract
An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses. In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.