The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Aug. 25, 2020
Applicant:

Socionext Inc., Kanagawa, JP;

Inventor:

Hidetoshi Tanaka, Yokohama, JP;

Assignee:

SOCIONEXT INC., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 23/535 (2013.01); H01L 29/0676 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device includes: a semiconductor substrate; a VNW transistor being a functional element provided with a first projection formed on the semiconductor substrate, having a semiconductor material, and having a lower end and an upper end; a dummy functional element provided with a second projection formed on the semiconductor substrate, having a semiconductor material, having a lower end and an upper end, and arranged side by side with the first projection; and a first wiring formed above the first projection and above the second projection, electrically connected to the upper end of the first projection, and electrically isolated from the upper end of the second projection. Consequently, the semiconductor device capable of suppressing variation in characteristics of the VNW transistors is realized.


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