The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Sep. 21, 2020
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Christelle Charpin-Nicolle, Grenoble, FR;
Florian Pebay-Peyroula, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/573 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/16 (2013.01);
Abstract
A microelectronic device and method for manufacturing a microelectronic device comprising a plurality of resistive memories, a part of these resistive memories, called PUF memories, forming a PUF, the rest of these resistive memories being known as storage memories. The manufacturing process comprising forming a dielectric layer having on at least one contact surface in contact with an electrode a surface roughness of said surface greater than that of the same dielectric layer of the storage memories.