The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Feb. 02, 2021
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Tadashi Watanabe, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0274 (2013.01); H01L 21/28114 (2013.01); H01L 21/28141 (2013.01); H01L 21/823437 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01); H01L 29/42316 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes steps of forming a protective film on a semiconductor substrate, forming a resist film on the protective film such that the resist film includes a region where the resist film becomes thicker from a drain electrode to a source electrode, forming a first opening in the resist film by irradiating the resist film in the region with an electron beam and developing the resist film, forming a second opening that exposes an upper surface of the semiconductor substrate by removing the protective film using the resist film in which the first opening is formed as a mask, forming a third opening in the resist film by further developing the resist film after forming the second opening, the third opening being formed by expanding the first opening toward the drain electrode, and forming a gate electrode in the second and the third openings.


Find Patent Forward Citations

Watanabe, Tadashi. (2022). Method for manufacturing semiconductor device (U.S. Patent No. 11443956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11443956

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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