The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Aug. 09, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Wolfgang Aderhold, Cupertino, CA (US);
Yi-Chiau Huang, Fremont, CA (US);
Wei Liu, San Jose, CA (US);
Benjamin Colombeau, San Jose, CA (US);
Abhilash Mayur, Salinas, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 21/2255 (2013.01); H01L 21/324 (2013.01); H01L 21/02269 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.