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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11443946 B1

PDFFull Text
Date of Patent:
Sep. 13, 2022

Filed:

Aug. 27, 2020

Method for manufacturing silicon carbide base body, method for manufacturing semiconductor device, silicon carbide base body, and semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Johji Nishio, Machida, JP;

Chiharu Ota, Kawasaki, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); C30B 29/36 (2006.01); C30B 23/02 (2006.01); C30B 25/20 (2006.01); C23C 14/06 (2006.01); C23C 14/58 (2006.01); C23C 16/32 (2006.01); C23C 16/56 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C23C 14/0635 (2013.01); C23C 14/5873 (2013.01); C23C 16/325 (2013.01); C23C 16/56 (2013.01); C30B 23/025 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02609 (2013.01); H01L 21/02631 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01);
Abstract

According to one embodiment, a method for manufacturing a silicon carbide base body is disclosed. The method can include preparing a first base body including silicon carbide. The first base body includes a first base body surface tilted with respect to a (0001) plane of the first base body. A first line segment where the first base body surface and the (0001) plane of the first base body intersect is along a [11-20] direction of the first base body. The method can include forming a first layer at the first base body surface. The first layer includes silicon carbide. The method can include removing a portion of the first layer. The first-layer surface is tilted with respect to a (0001) plane of the first layer. A second line segment where the first-layer surface and the (0001) plane of the first layer intersect is along a [−1100] direction.

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