The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Feb. 07, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Krishna Nittala, Sunnyvale, CA (US);
Diwakar N. Kedlaya, San Jose, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Yi Yang, San Jose, CA (US);
Rui Cheng, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (T) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (T) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.