The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jan. 11, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Jae Hyeon Shin, Gyeonggi-do, KR;
Gwi Han Ko, Gyeonggi-do, KR;
Sung Hun Kim, Gyeonggi-do, KR;
Gwan Park, Gyeonggi-do, KR;
Hyun Soo Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0425 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01);
Abstract
A memory device may include a first sub-block and a second sub-block each including a plurality of select transistors and a plurality of memory cells, a peripheral circuit performing a read operation on data stored in the first sub-block, and a control logic controlling the peripheral circuit to turn on the plurality of select transistors included in each of the first and second sub-blocks and apply a read voltage to a selected word line among a plurality of word lines.