The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Mar. 29, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Makoto Hirano, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 7/14 (2006.01); G11C 16/04 (2006.01); G11C 7/02 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 7/02 (2013.01); G11C 7/14 (2013.01); G11C 16/0425 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract
A nonvolatile memory device includes: a memory cell array in which a plurality of memory cells are arranged at intersections between a plurality of word-lines and a plurality of bit-lines; and a word-line select circuit configured to, in response to a first global word-line select signal, start reading a target memory cell connected to a target word-line and provide a reading result of the target memory cell to a sensing line through at least one adjacent word-line that is adjacent to and coupled to the target word-line.