The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Mar. 19, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sangkyu Kim, Suwon-si, KR;

Jonglae Park, Anyang-si, KR;

Hyunju Kang, Cheongdo-gun, KR;

Jungwook Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/3203 (2019.01); H01L 27/112 (2006.01); G06F 1/12 (2006.01); G06F 1/3296 (2019.01); G06F 1/324 (2019.01);
U.S. Cl.
CPC ...
G06F 1/3203 (2013.01); G06F 1/12 (2013.01); G06F 1/324 (2013.01); G06F 1/3296 (2013.01); H01L 27/112 (2013.01);
Abstract

There is provided a method of controlling performance boosting of a semiconductor device. According to the method, input of a user is monitored. A performance of the semiconductor device is boosted by consecutively executing a plurality of boosting policies associated with a plurality of macros based on an input event associated with the input of the user and available energy during a boosting interval. Boosting level in each of the boosting policies may be adaptively determined based on the boosting level and the amount of usage of the semiconductor device used in the previous boosting policy and the boosting policies are consecutively executed. Accordingly, improved and/or optimal performance boosting can be provided to the semiconductor device and at the same time, a waste of power can be mitigated and/or prevented.


Find Patent Forward Citations

Loading…