The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jul. 20, 2020
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Sheng-Kai Lin, Hsinchu, TW;

Chia-Hsin Chung, Hsinchu, TW;

Tsai-Sheng Lo, Hsinchu, TW;

Sheng-Ming Huang, Hsinchu, TW;

Ming-Jui Wang, Hsinchu, TW;

Chih-Chiang Chen, Hsinchu, TW;

Hui-Ku Chang, Hsinchu, TW;

Cheng-Chan Wang, Hsinchu, TW;

Chia-Po Lin, Hsinchu, TW;

Jen-Kuei Lu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 5/30 (2006.01); G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
G02B 5/3058 (2013.01); G02F 1/133536 (2013.01); G02F 1/133548 (2021.01);
Abstract

A polarizer substrate includes a substrate, a reflective layer, and a metal pattern layer. The reflective layer is located on the substrate and has a transmission area and a reflective area. The metal pattern layer is located on the reflective layer and the substrate. The metal pattern layer includes a polarizer structure and a microstructure. The polarizer structure includes a plurality of grid lines overlapping the transmission area. A thickness of each of the grid lines is 200 nm to 500 nm, a width of each of the grid lines is 30 nm to 70 nm, and a distance between each adjacent two of the grid lines is 30 nm to 70 nm. The microstructure overlaps the reflective area, and a thickness of the microstructure is 20 nm to 500 nm.


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