The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jun. 10, 2019
Applicant:

Soochow University, Suzhou, CN;

Inventors:

Mingxiang Wang, Suzhou, CN;

Yanyan Chen, Suzhou, CN;

Dongli Zhang, Suzhou, CN;

Huaisheng Wang, Suzhou, CN;

Assignee:

Soochow University, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); G01R 31/27 (2006.01); H01L 27/12 (2006.01); G01R 31/30 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2623 (2013.01); G01R 31/2601 (2013.01); G01R 31/2621 (2013.01); G01R 31/275 (2013.01); G01R 31/2884 (2013.01); G01R 31/2642 (2013.01); G01R 31/2831 (2013.01); G01R 31/3004 (2013.01); H01L 27/1203 (2013.01);
Abstract

The present application discloses a method and apparatus for calculating the kink current of SOI device, which is used to solve the problem that the kink current calculation in the prior art is not accurate and is not suitable for circuit simulation. The method includes: obtaining the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current of the SOI device respectively; and calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current.


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