The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jul. 02, 2019
Applicant:

Utica Leaseco, Llc, Rochester Hills, MI (US);

Inventors:

Jan Moritz Limpinsel, San Mateo, CA (US);

Octavi Santiago Escala Semonin, San Francisco, CA (US);

Edwin J. Rodriguez, San Jose, CA (US);

Brendan M. Kayes, Los Gatos, CA (US);

Vladimir N. Faifer, Santa Clara, CA (US);

Assignee:

Utica Leaseco, LLC, Rochester Hills, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/08 (2006.01); G01R 1/073 (2006.01); G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
G01R 27/08 (2013.01); G01R 1/073 (2013.01); G01R 31/2601 (2013.01); G01R 31/2648 (2013.01);
Abstract

This disclosure describes an elastic multi-contact probe that includes conductive strips each of which comprises a conductive elastomer; dielectric strips formed on a back surface of a respective conductive strip; and a layer of a thermoplastic formed on back surfaces of the dielectric strips. The disclosure also describes a method that includes measuring a first I-V curve between a pair of inner probes of the an elastic multi-contact probe based on a first current applied to a pair of outer probes; determining a first slope of a linear region of the first I-V curve; measuring a second I-V curve between the pair of inner probes based on a second current applied to the pair of inner probes; determining a second slope of a linear region of the second I-V curve; and calculating a sheet resistance and a contact resistivity of the semiconductor material based on the first and second slopes.


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